- Patent Title: Semiconductor memory devices and methods of manufacturing thereof
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Application No.: US17408023Application Date: 2021-08-20
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Publication No.: US11647637B2Publication Date: 2023-05-09
- Inventor: Meng-Han Lin , Chia-En Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; H01L27/1159 ; H01L29/417 ; H01L29/24 ; H01L27/11585 ; H01L27/11587
Abstract:
A semiconductor device comprises a source and a pair of drains disposed on either side of the source in a first direction and spaced apart therefrom. A channel layer extending in the first direction is disposed on at least one radially outer surface of the source and the pair of drains in a second direction perpendicular to the first direction. A memory layer extending in the first direction is disposed on a radially outer surface of the channel layer in the second direction. At least one gate layer that extends in the first direction, is disposed on a radially outer surface of the memory layer in the second direction. A gate extension structure extends from the each of the drains at least part way towards the source in the first direction, and is located proximate to, and in contact with each of the channel layer and the corresponding drain.
Public/Granted literature
- US20230058806A1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2023-02-23
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