Invention Grant
- Patent Title: Three-dimensional memory device and method
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Application No.: US17018114Application Date: 2020-09-11
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Publication No.: US11647634B2Publication Date: 2023-05-09
- Inventor: Feng-Cheng Yang , Meng-Han Lin , Han-Jong Chia , Sheng-Chen Wang , Chung-Te Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/11597 ; H01L29/78 ; G11C5/06 ; G11C11/22 ; H01L21/822 ; H01L29/66
Abstract:
A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.
Public/Granted literature
- US20220020770A1 Three-Dimensional Memory Device and Method Public/Granted day:2022-01-20
Information query
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