Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16782697Application Date: 2020-02-05
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Publication No.: US11647630B2Publication Date: 2023-05-09
- Inventor: Yumi Nakajima
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 2019168666 2019.09.17
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L23/522 ; H01L23/528 ; H01L23/00 ; H01L27/11526 ; H01L25/18 ; H01L27/11573
Abstract:
According to one embodiment, a semiconductor memory device includes a via provided above a substrate, a conductive layer provided on the via, and a via provided on the conductive layer. The via, the conductive layer, and the via are one continuous structure.
Public/Granted literature
- US20210082946A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-03-18
Information query
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