Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US17223600Application Date: 2021-04-06
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Publication No.: US11646377B2Publication Date: 2023-05-09
- Inventor: Wei-Ting Chien , Su-Hao Liu , Liang-Yin Chen , Huicheng Chang , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L29/417
Abstract:
In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.
Public/Granted literature
- US20220059700A1 Semiconductor Device and Method of Manufacture Public/Granted day:2022-02-24
Information query
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