- Patent Title: Short-circuit semiconductor component and method for operating same
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Application No.: US16965432Application Date: 2019-01-23
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Publication No.: US11646365B2Publication Date: 2023-05-09
- Inventor: Uwe Kellner-Werdehausen , Michael Stelte , Markus Droldner , Dirk Pikorz , Peter Weidner , Reiner Barthelmess , Mario Schenk , Jens Przybilla
- Applicant: Infineon Technologies Bipolar GmbH & Co. KG.
- Applicant Address: DE Warstein
- Assignee: Infineon Technologies Bipolar GmbH & Co. KG.
- Current Assignee: Infineon Technologies Bipolar GmbH & Co. KG.
- Current Assignee Address: DE Warstein
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2018102234.4 2018.02.01
- International Application: PCT/EP2019/051557 2019.01.23
- International Announcement: WO2019/149581A 2019.08.08
- Date entered country: 2020-07-28
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L23/62 ; H01L27/02 ; H01L29/423

Abstract:
A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.
Public/Granted literature
- US20210367067A1 SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME Public/Granted day:2021-11-25
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