Invention Grant
- Patent Title: Semiconductor device having transistors in which source/drain regions are shared
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Application No.: US17179198Application Date: 2021-02-18
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Publication No.: US11646347B2Publication Date: 2023-05-09
- Inventor: Toshinao Ishii
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- The original application number of the division: US16514828 2019.07.17
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L29/08 ; G11C11/412 ; H01L29/06 ; H01L29/423 ; H01L29/10 ; G11C11/413

Abstract:
Disclosed herein is an apparatus that includes: a first diffusion region having a rectangular shape and including first and second source/drain regions arranged in the first direction; a second diffusion region having a rectangular shape and including third to fifth source/drain regions arranged in the first direction; a first gate electrode extending in a second direction, and provided between the first and second source/drain regions and between the third and fourth source/drain regions; and a second gate electrode extending in the second direction, and provided between the fourth and fifth source/drain regions. The first and third source/drain regions are brought into the same potential as each other, and the second and fourth source/drain regions are brought into the same potential as each other.
Public/Granted literature
- US20210175331A1 Semiconductor Device Having Transistors In Which Source/Drain Regions Are Shared Public/Granted day:2021-06-10
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