Invention Grant
- Patent Title: Semiconductor devices with single-photon avalanche diodes and rectangular microlenses
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Application No.: US16776815Application Date: 2020-01-30
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Publication No.: US11646335B2Publication Date: 2023-05-09
- Inventor: Brian Patrick McGarvey
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Treyz Law Group, P.C.
- Agent Joseph F. Guihan
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/107 ; G01S7/481 ; H04N25/75 ; G01S7/4863 ; G01S7/4914 ; H01L31/0232 ; G01S17/894 ; H01L31/02

Abstract:
An imaging device may include single-photon avalanche diodes (SPADs). The single-photon avalanche diodes may be arranged in an array of microcells (such as a silicon photomultiplier). Each microcell may have an aspect ratio that is greater than 1. Each microcell may be covered by a microlens that also has an aspect ratio that is greater than 1. The microlens may have curvature in a first direction (parallel to the width of the microcell/microlens) and less curvature in a second direction that is orthogonal to the first direction (parallel to the length of the microcell/microlens). Forming non-square, rectangular microcells and microlenses in this fashion may allow for larger microcells that still have satisfactory microlens performance.
Public/Granted literature
- US20210242261A1 SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND RECTANGULAR MICROLENSES Public/Granted day:2021-08-05
Information query
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