Invention Grant
- Patent Title: Co-integration of gate-all-around FET, FINFET and passive devices on bulk substrate
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Application No.: US17210610Application Date: 2021-03-24
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Publication No.: US11646306B2Publication Date: 2023-05-09
- Inventor: Julien Frougier , Veeraraghavan S. Basker , Andrew Gaul , Ruilong Xie
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Samuel A. Waldbaum
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/02 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L21/8234 ; H01L29/78
Abstract:
An apparatus that includes a substrate divided into a plurality of different regions, where the substrate remains physically together. A first device located in a first region of the plurality of different regions, where the first device has a first height. A second device located in a second region of the plurality of different regions. The second device has a second height and the second device is a different device from the first device. A third device located in a third region of the plurality of different regions. The third device has a third height and the third device is a different device from the first device and the second device. The second height is smaller than the first height.
Public/Granted literature
- US20220310590A1 CO-INTEGRATION OF GATE-ALL-AROUND FET, FINFET AND PASSIVE DEVICES ON BULK SUBSTRATE Public/Granted day:2022-09-29
Information query
IPC分类:
