Invention Grant
- Patent Title: Semiconductor structure and method
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Application No.: US16935465Application Date: 2020-07-22
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Publication No.: US11646293B2Publication Date: 2023-05-09
- Inventor: Chia-Shen Cheng , Wei-Yu Chen , Philip Yu-Shuan Chung , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.
Public/Granted literature
- US20220028823A1 Semiconductor Structure and Method Public/Granted day:2022-01-27
Information query
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