Invention Grant
- Patent Title: Helmet structures for semiconductor interconnects
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Application No.: US16535539Application Date: 2019-08-08
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Publication No.: US11646266B2Publication Date: 2023-05-09
- Inventor: Kevin Lai Lin , Miriam Ruth Reshotko , Nafees Aminul Kabir
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L23/522

Abstract:
Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.
Public/Granted literature
- US20210043565A1 HELMET STRUCTURES FOR SEMICONDUCTOR INTERCONNECTS Public/Granted day:2021-02-11
Information query
IPC分类: