Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17003939Application Date: 2020-08-26
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Publication No.: US11646250B2Publication Date: 2023-05-09
- Inventor: Daisuke Inoue
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 2020038792 2020.03.06
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device includes metal connector plate having a first lower surface, facing an electrode of a semiconductor chip, a first end surface, a second end surface, and a second lower surface connecting the first end surface and the second end surface. In a first direction parallel to the semiconductor chip, an end surface of the electrode is located between the positions of the first end surface and the second end surface. A distance from the second lower surface to the electrode is greater than a distance from the first lower surface to the electrode. A joining component has a first portion between the first lower surface and the electrode and a second portion between the second lower surface and the electrode.
Public/Granted literature
- US20210280500A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-09
Information query
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