Invention Grant
- Patent Title: Methods and apparatuses for depositing amorphous silicon atop metal oxide
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Application No.: US16822755Application Date: 2020-03-18
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Publication No.: US11646237B2Publication Date: 2023-05-09
- Inventor: Dong Kil Yim , Jose-Ignacio Del-Agua Borniquel
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01L21/8254
- IPC: H01L21/8254 ; H01L29/786 ; H01L29/66 ; H01L29/22
Abstract:
In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein the first layer comprises one or more metal oxides of indium (In), gallium (Ga), zinc (Zn), tin (Sn) or combinations thereof.
Public/Granted literature
- US20210225710A1 METHODS AND APPARATUSES FOR DEPOSITING AMORPHOUS SILICON ATOP METAL OXIDE Public/Granted day:2021-07-22
Information query
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