Invention Grant
- Patent Title: Self-aligned pattern formation for a semiconductor device
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Application No.: US16693668Application Date: 2019-11-25
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Publication No.: US11646221B2Publication Date: 2023-05-09
- Inventor: Sean D. Burns , Lawrence A. Clevenger , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Nicole Saulnier
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent L. Jeffrey Kelly
- The original application number of the division: US15967705 2018.05.01
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L23/528 ; H01L23/522
Abstract:
A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.
Public/Granted literature
- US20200090985A1 SELF-ALIGNED PATTERN FORMATION FOR A SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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