A plasma processing apparatus includes: a chamber; a substrate support provided inside the chamber and including an electrode, an electrostatic chuck provided on the electrode, and an edge ring that is disposed on the electrostatic chuck while surrounding the substrate placed on the electrostatic chuck; a radio-frequency power supply that supplies radio-frequency power for generating plasma from a gas within the chamber; a DC power supply that applies a negative DC voltage to the edge ring; and a controller that controls the radio-frequency power and the DC voltage. The controller controls the apparatus to execute a process including: (a) stopping application of the DC voltage while stopping supply of the radio-frequency power; and (b) starting the application of the DC voltage after a predetermined delay time elapses since the supply of the radio-frequency power.