Invention Grant
- Patent Title: Resist composition and patterning process
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Application No.: US17212275Application Date: 2021-03-25
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Publication No.: US11644753B2Publication Date: 2023-05-09
- Inventor: Jun Hatakeyama
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JP 2020109898 2020.06.25
- Main IPC: G03F7/039
- IPC: G03F7/039 ; C08F220/18 ; C08F220/28 ; G03F7/004 ; C07C211/62 ; C07C211/63 ; C07C381/12

Abstract:
A resist composition is provided comprising a base polymer and a quencher comprising a salt compound consisting of a cyclic ammonium cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.
Public/Granted literature
- US20230021453A1 RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2023-01-26
Information query
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