Invention Grant
- Patent Title: High resolution radiation sensor based on single polysilicon floating gate array
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Application No.: US17721012Application Date: 2022-04-14
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Publication No.: US11644580B2Publication Date: 2023-05-09
- Inventor: Yakov Roizin , Evgeny Pikhay , Vladislav Dayan
- Applicant: Tower Semiconductor Ltd.
- Applicant Address: IL Migdal Haemek
- Assignee: Tower Semiconductor Ltd.
- Current Assignee: Tower Semiconductor Ltd.
- Current Assignee Address: IL Migdal Haemek
- Agency: Bever, Hoffman & Harms, LLP
- The original application number of the division: US16861652 2020.04.29
- Main IPC: G01T1/02
- IPC: G01T1/02 ; H01L27/146 ; H01L31/119 ; H01L31/0216

Abstract:
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.
Public/Granted literature
- US20220244410A1 HIGH RESOLUTION RADIATION SENSOR BASED ON SINGLE POLYSILICON FLOATING GATE ARRAY Public/Granted day:2022-08-04
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