Invention Grant
- Patent Title: Gas inspection method, substrate processing method, and substrate processing system
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Application No.: US17189804Application Date: 2021-03-02
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Publication No.: US11644121B2Publication Date: 2023-05-09
- Inventor: Risako Matsuda , Norihiko Amikura
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 2020052394 2020.03.24
- Main IPC: F16K37/00
- IPC: F16K37/00 ; G01F1/34

Abstract:
A gas inspection method includes: inputting a signal for opening a secondary valve; measuring, by a secondary pressure gauge, a pressure P on a downstream side of an orifice of a flow rate controller at a time point when a period t elapses from the input of the signal for opening the secondary valve; measuring, by the secondary pressure gauge, a standard deviation σ of the pressure P on the downstream side of the orifice of the flow rate controller at the time point when the period t elapses from the input of the signal for opening the secondary valve; and determining whether or not an open degree of the secondary valve is normal by comparing the pressure P and the standard deviation σ of the pressure P with a threshold value P0 of the pressure and a threshold value σ0 of the standard deviation of the pressure.
Public/Granted literature
- US20210301942A1 GAS INSPECTION METHOD, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING SYSTEM Public/Granted day:2021-09-30
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