Invention Grant
- Patent Title: ScAlMgO4 monocrystalline substrate, and method of manufacture thereof
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Application No.: US16739105Application Date: 2020-01-09
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Publication No.: US11643752B2Publication Date: 2023-05-09
- Inventor: Kentaro Miyano , Naoya Ryoki , Akihiko Ishibashi , Masaki Nobuoka
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 2019024639 2019.02.14
- Main IPC: C30B29/22
- IPC: C30B29/22 ; C30B15/20
Abstract:
A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.
Public/Granted literature
- US20200263319A1 ScAlMgO4 MONOCRYSTALLINE SUBSTRATE, AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2020-08-20
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