Invention Grant
- Patent Title: Silicided collector structure
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Application No.: US17350040Application Date: 2021-06-17
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Publication No.: US11640975B2Publication Date: 2023-05-02
- Inventor: Jay Paul John , James Albert Kirchgessner , Ljubo Radic
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/45 ; H01L29/66 ; H01L29/40 ; H01L29/735
Abstract:
A semiconductor device includes an emitter, a base, and a collector. A portion of the collector is located below a trench in a substrate. A collector silicide is located on at least a portion of a bottom portion of the trench and on at least a portion of a sidewall of the trench. The collector silicide structure is electrically coupled to a collector contact structure.
Public/Granted literature
- US20220406906A1 SILICIDED COLLECTOR STRUCTURE Public/Granted day:2022-12-22
Information query
IPC分类:
