Invention Grant
- Patent Title: Semiconductor device formed on SOI substrate
-
Application No.: US17460998Application Date: 2021-08-30
-
Publication No.: US11640938B2Publication Date: 2023-05-02
- Inventor: Ki Won Lim , Jin Hyo Jung , Hae Taek Kim , Seung Hyun Eom , Ja Geon Koo , Hyun Joong Lee , Sang Yong Lee
- Applicant: DB HITEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: DB HITEK CO., LTD.
- Current Assignee: DB HITEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Patterson Thuente IP
- Priority: KR10-2020-0109978 20200831
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/528 ; H01L27/12
Abstract:
A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.
Public/Granted literature
- US20220068793A1 SEMICONDUCTOR DEVICE FORMED ON SOI SUBSTRATE Public/Granted day:2022-03-03
Information query
IPC分类:
