Invention Grant
- Patent Title: Method of implanting an implant species into a substrate at different depths
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Application No.: US16877855Application Date: 2020-05-19
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Publication No.: US11640908B2Publication Date: 2023-05-02
- Inventor: Joerg Ortner , Marcel Heller , Dieter Kaiser , Nicolo Morgana , Jens Schneider
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP19175280 20190520
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/265 ; H01L29/78

Abstract:
A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.
Public/Granted literature
- US20200373163A1 Method of Implanting an Implant Species into a Substrate at Different Depths Public/Granted day:2020-11-26
Information query
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