Invention Grant
- Patent Title: Memory device and operation method thereof
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Application No.: US17518624Application Date: 2021-11-04
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Publication No.: US11640255B2Publication Date: 2023-05-02
- Inventor: Wei-Chen Wang , Ting-Hsuan Lo , Chun-Feng Wu , Yuan-Hao Chang , Tei-Wei Kuo
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
Disclosed is a memory device and an operation method thereof. The operation method of memory device, comprising: programming a plurality of sub-matrices including at least one of non-zero element of a rearranged matrix to a plurality of operation units of the memory device; and programming a mapping table into a working memory of a memory device. The rearranged matrix is generated by rearrange a plurality of columns and a plurality of rows of an original matrix according to the positions of a plurality of non-zero elements of the original matrix. The mapping table comprises a correspondence of row indexes between the original matrix and the rearranged matrix, a correspondence of column indexes between the original matrix and the rearranged matrix and a correspondence between the sub-matrices including at least one non-zero element and the operation units storing the sub-matrices including at least one non-zero element.
Public/Granted literature
- US20220155959A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2022-05-19
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