Invention Grant
- Patent Title: Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device
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Application No.: US17018768Application Date: 2020-09-11
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Publication No.: US11640119B2Publication Date: 2023-05-02
- Inventor: Tetsuya Yamamoto
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JPJP2019-170804 20190919
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
An exposure method of performing an exposure operation of exposing a substrate via a projection optical system is provided. The method includes executing, in an exposure period in which the exposure operation is performed, aberration correction of the projection optical system to correct an aberration generated by performing the exposure operation, measuring, in a non-exposure period succeeding the exposure period, in which the exposure operation is not performed, an aberration of the projection optical system, and correcting the aberration of the projection optical system using a correction amount adjusted based on a result of the measurement so as to reduce a correction residual in the aberration correction of the projection optical system.
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