- Patent Title: Method for fabricating zinc oxide nanostructures and gas sensors
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Application No.: US17449288Application Date: 2021-09-29
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Publication No.: US11639910B2Publication Date: 2023-05-02
- Inventor: Derek Ho , Ying Wang
- Applicant: City University of Hong Kong
- Applicant Address: CN Hong Kong
- Assignee: City University of Hong Kong
- Current Assignee: City University of Hong Kong
- Current Assignee Address: CN Hong Kong
- Agency: S&F/WEHRW
- Main IPC: G01N27/12
- IPC: G01N27/12 ; G01N33/00

Abstract:
The present disclosure provides a gas sensor comprising a gas sensing layer fabricated based on a solution-processed, template-free synthesis method that achieves controllable ZnO nanostructured morphologies. The method is based on promotion and suppression of growth at specific crystallographic dimensions by tuning the polarity of the solvent. The gas sensing layer with the ZnO nanostructures exhibits high response, excellent selectivity and rapid recovery time.
Public/Granted literature
- US20220113270A1 METHOD FOR FABRICATING ZINC OXIDE NANOSTRUCTURES AND GAS SENSORS Public/Granted day:2022-04-14
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