- Patent Title: Semiconductor nanocrystal particles and production methods thereof
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Application No.: US16254676Application Date: 2019-01-23
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Publication No.: US11639469B2Publication Date: 2023-05-02
- Inventor: Jihyun Min , Eun Joo Jang , Hyo Sook Jang , Ankit Jain , Edward Sargent , Oleksandr Voznyy , Larissa Levina , Sjoerd Hoogland , Petar Todorovic , Makhsud Saidaminov
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , The Governing Council of the University of Toronto
- Applicant Address: KR Suwon-si; CA Toronto
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,The Governing Council of the University of Toronto
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,The Governing Council of the University of Toronto
- Current Assignee Address: KR Suwon-si; CA Toronto
- Agency: Cantor Colburn LLP
- Priority: KR10-2018-0008375 20180123
- Main IPC: C09K11/02
- IPC: C09K11/02 ; C09K11/88 ; C09K11/67 ; C01G25/00 ; C01G23/00 ; C01B19/00 ; B82Y40/00 ; B82Y20/00 ; H01L21/02
Abstract:
A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3 Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.
Public/Granted literature
- US20190225883A1 SEMICONDUCTOR NANOCRYSTAL PARTICLES AND PRODUCTION METHODS THEREOF Public/Granted day:2019-07-25
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