Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17439894Application Date: 2021-06-22
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Publication No.: US11622488B2Publication Date: 2023-04-04
- Inventor: Feng Wu , Sang Yeol Park
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202011223554.X 20201105
- International Application: PCT/CN2021/101614 WO 20210622
- International Announcement: WO2022/095462 WO 20220512
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L23/00

Abstract:
The present application provides a semiconductor structure and a manufacturing method thereof, and relates to the field of display technology. The semiconductor structure includes a substrate. The substrate includes an array region and a peripheral circuit region surrounding the array region. Multiple capacitors are arranged in an array in the array region. Virtual lines connecting centers of any three consecutively adjacent capacitors among the multiple capacitors located at an edge of the array region define a virtual angle greater than 90°.
Public/Granted literature
- US20220271038A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-08-25
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