Invention Grant
- Patent Title: Memories for receiving or transmitting voltage signals
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Application No.: US17076864Application Date: 2020-10-22
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Publication No.: US11621684B2Publication Date: 2023-04-04
- Inventor: Agatino Massimo Maccarrone , Luigi Pilolli
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H02J7/00 ; H02J7/04 ; H03F3/30

Abstract:
Memories for receiving or transmitting voltage signals might include an input or output buffer including a first stage having first and second inputs and configured to generate a current sink and source at its first and second outputs responsive to a voltage difference between its first and second inputs, and a second stage having a first input connected to the first output of the first stage, a second input connected to the second output of the first stage, a first voltage signal node connected to its first input through a first resistance, and a second voltage signal node connected to its second input through a second resistance, wherein a first inverter is connected in parallel with the first resistance, a second inverter is connected in parallel with the second resistance, and a pair of cross-coupled inverters are connected between the first voltage signal node and the second voltage signal node.
Public/Granted literature
- US20210044266A1 MEMORIES FOR RECEIVING OR TRANSMITTING VOLTAGE SIGNALS Public/Granted day:2021-02-11
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