Invention Grant
- Patent Title: Compensation of trapping in field effect transistors
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Application No.: US17395035Application Date: 2021-08-05
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Publication No.: US11621672B2Publication Date: 2023-04-04
- Inventor: Young-Youl Song , Zulhazmi A. Mokhti , John Wood , Qianli Mu , Jeremy Fisher
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Sage Patent Group
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/02 ; H01L29/778 ; H01L29/20 ; H01L23/66 ; H03F3/213 ; H03F3/195 ; H03F1/32

Abstract:
A circuit includes a field effect transistor (FET), a reference transistor having an output coupled to an output of the FET, an active bias circuit coupled to the reference transistor and configured to generate an input signal for the reference transistor in response to a change in drain current of the reference transistor due to carrier trapping and to apply the input signal to an input of the reference transistor, and a summing node coupled to an input of the FET and to the input of the reference transistor. The summing node adds the input signal to an input signal of the FET to compensate the carrier trapping effect.
Public/Granted literature
- US20230040260A1 COMPENSATION OF TRAPPING IN FIELD EFFECT TRANSISTORS Public/Granted day:2023-02-09
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