Invention Grant
- Patent Title: Light-emitting device with a plurality of electrodes on a semiconductor stack
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Application No.: US17321078Application Date: 2021-05-14
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Publication No.: US11621374B2Publication Date: 2023-04-04
- Inventor: Chao-Hsing Chen , Cheng-Lin Lu , Chih-Hao Chen , Chi-Shiang Hsu , I-Lun Ma , Meng-Hsiang Hong , Hsin-Ying Wang , Kuo-Ching Hung , Yi-Hung Lin
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong, Steiner & Mlotkowski
- Priority: TW107126770 20180801
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/0232 ; H01L21/00 ; H01L33/38 ; H01L33/10 ; H01L33/32 ; H01L33/46 ; H01L33/24 ; H01L25/075 ; H01L33/36

Abstract:
A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
Public/Granted literature
- US20210273137A1 LIGHT-EMITTING DEVICE Public/Granted day:2021-09-02
Information query
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