Invention Grant
- Patent Title: Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction
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Application No.: US17136831Application Date: 2020-12-29
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Publication No.: US11621348B2Publication Date: 2023-04-04
- Inventor: Kangguo Cheng , Chen Zhang , Xin Miao , Wenyu Xu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Samuel Waldbaum
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/51 ; H01L29/49
Abstract:
A method of forming a vertical fin field effect transistor device is provided. The method includes forming a vertical fin and fin template on a bottom source/drain layer, wherein the fin template is on the vertical fin. The method further includes forming a gate structure on the vertical fin and fin template, and forming a top spacer layer on the gate structure. The method further includes removing the fin template to form an opening in the top spacer layer, and removing a portion of a gate electrode of the gate structure to form a cavity; and removing a portion of a gate dielectric layer of the gate structure to form a groove around the vertical fin.
Public/Granted literature
- US20210119043A1 VERTICAL TRANSISTOR DEVICES WITH COMPOSITE HIGH-K AND LOW-K SPACERS WITH A CONTROLLED TOP JUNCTION Public/Granted day:2021-04-22
Information query
IPC分类:
