Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;
an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3;
a resistivity of the substrate wafer of not less than 5 mΩcm and not more than 10 mΩcm; and
the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.