Invention Grant
- Patent Title: Vertical field effect transistor with crosslink fin arrangement
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Application No.: US17125850Application Date: 2020-12-17
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Publication No.: US11621326B2Publication Date: 2023-04-04
- Inventor: Indira Seshadri , Ruilong Xie , Chen Zhang , Ekmini Anuja De Silva
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Silvia Solano; Michael A. Petrocelli
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/308 ; H01L29/78
Abstract:
A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n−1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n≥3.
Public/Granted literature
- US20220199776A1 VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT Public/Granted day:2022-06-23
Information query
IPC分类:
