Invention Grant
- Patent Title: Imaging element, laminated imaging element, and solid-state imaging device
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Application No.: US16643331Application Date: 2018-06-08
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Publication No.: US11621290B2Publication Date: 2023-04-04
- Inventor: Nobuhiro Kawai , Hideaki Togashi , Fumihiko Koga , Tetsuji Yamaguchi , Shintarou Hirata , Taiichiro Watanabe , Yoshihiro Ando
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JPJP2017-167586 20170831
- International Application: PCT/JP2018/022008 WO 20180608
- International Announcement: WO2019/044103 WO 20190307
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.
Public/Granted literature
- US20210082987A1 IMAGING ELEMENT, LAMINATED IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE Public/Granted day:2021-03-18
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