Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices
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Application No.: US17035970Application Date: 2020-09-29
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Publication No.: US11621276B2Publication Date: 2023-04-04
- Inventor: Seong-hun Jeong , Byoungil Lee , Joonhee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2020-0024333 20200227
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/11565 ; H01L23/528 ; H01L27/11519 ; H01L27/11526 ; H01L27/11573

Abstract:
A semiconductor device includes a substrate including a lower horizontal layer and an upper horizontal layer and having a cell array region and a connection region, an electrode structure including electrodes, which are stacked above the substrate, and which extend from the cell array region to the connection region, a vertical channel structure on the cell array region that penetrates the electrode structure and is connected to the substrate, and a separation structure on the connection region that penetrates the electrode structure. The lower horizontal layer has a first top surface in contact with a first portion of the separation structure, and a second top surface in contact with a second portion of the separation structure, and an inflection point at which a height of the lower horizontal layer is abruptly changed between the first top surface and the second top surface.
Public/Granted literature
- US20210272981A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES Public/Granted day:2021-09-02
Information query
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