Invention Grant
- Patent Title: Detection circuit and detection method
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Application No.: US17546131Application Date: 2021-12-09
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Publication No.: US11621261B2Publication Date: 2023-04-04
- Inventor: Qian Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN202110758286.X 20210705
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H05K9/00

Abstract:
The embodiments provide a detection circuit and a detection method. The detection circuit includes an ESD protection device, a first fuse and a transistor. A first terminal of the ESD protection device is connected to a first terminal of the first fuse, and a connection terminal of the ESD protection device and the first fuse serves as a first test terminal; a second terminal of the first fuse is connected to a gate electrode of the transistor, and a connection terminal of the first fuse and the transistor serves as a second test terminal; and a second terminal of the ESD protection device is connected to at least one of a source electrode, drain electrode or substrate of the transistor, and a connection terminal of the ESD protection device and the transistor serves as a third test terminal.
Public/Granted literature
- US20230005907A1 DETECTION CIRCUIT AND DETECTION METHOD Public/Granted day:2023-01-05
Information query
IPC分类: