Invention Grant
- Patent Title: Bonded wafer device structure and methods for making the same
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Application No.: US17218401Application Date: 2021-03-31
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Publication No.: US11621248B2Publication Date: 2023-04-04
- Inventor: Harry-Hak-Lay Chuang , Wen-Tuo Huang , Wei Cheng Wu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Tarbury Law Group, PLLC
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L21/66 ; H01L25/00

Abstract:
Bonded wafer device structures, such as a wafer-on-wafer (WoW) structures, and methods of fabricating bonded wafer device structures, including an array of contact pads formed in an interconnect level of at least one wafer of the bonded wafer device structure. The array of contact pads formed in an interconnect level of at least one wafer may have an array pattern that corresponds to an array pattern of contact pads that is subsequently formed over a surface of the bonded wafer structure. The array of contact pads formed in an interconnect level of at least one wafer of the bonded wafer device structure may enable improved testing of individual wafers, including circuit probe testing, prior to the wafer being stacked and bonded to one or more additional wafers to form a bonded wafer structure.
Public/Granted literature
- US20220320044A1 BONDED WAFER DEVICE STRUCTURE AND METHODS FOR MAKING THE SAME Public/Granted day:2022-10-06
Information query
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