The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first substrate including a center region and an edge region distal from the center region, a first circuit layer positioned on the first substrate, a center power pad positioned in the first circuit layer and above the center region, an edge power pad positioned in the first circuit layer, above the edge region, and electrically coupled to the center power pad, a redistribution power pattern positioned above the first circuit layer and electrically coupled to the center power pad, and an edge power via positioned between the edge power pad and the redistribution power pattern, and electrically connecting the edge power pad and the redistribution power pattern. The first substrate, the center power pad, the edge power pad, the redistribution power pattern, and the edge power via together configure a first semiconductor die.