Invention Grant
- Patent Title: Methods of fabricating leadless power amplifier packages including topside terminations
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Application No.: US17659379Application Date: 2022-04-15
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Publication No.: US11621231B2Publication Date: 2023-04-04
- Inventor: Yun Wei , Fernando A. Santos , Lakshminarayan Viswanathan , Scott Duncan Marshall
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538 ; H01L23/13 ; H01L23/31 ; H01L23/36

Abstract:
Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.
Public/Granted literature
- US20220238450A1 METHODS OF FABRICATING LEADLESS POWER AMPLIFIER PACKAGES INCLUDING TOPSIDE TERMINATIONS Public/Granted day:2022-07-28
Information query
IPC分类: