Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET, wherein the mass ratio of the silica particles (A) to the silica particles (B) is 100:0 to 85:15.