Invention Grant
- Patent Title: Memory with symmetric read current profile
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Application No.: US17375608Application Date: 2021-07-14
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Publication No.: US11621037B2Publication Date: 2023-04-04
- Inventor: Yuhsiang Chen , Shao-Yu Chou , Chun-Hao Chang , Min-Shin Wu , Yu-Der Chih
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G11C11/41
- IPC: G11C11/41 ; G11C11/419 ; G11C11/418 ; G11C11/409 ; G11C11/413 ; G11C7/10

Abstract:
Memories are provided. A memory includes a first memory array, a second memory array and a read circuit. The first memory array is configured to store first data. The second memory array is configured to store second data that is complementary to the first data. The read circuit includes a decoding circuit, a sensing circuit and an output buffer. The decoding circuit is configured to provide a first signal according to the first data and a second signal according to the second data in response to an address signal. The sensing circuit is configured to provide a first sensing signal according to a reference signal and the first signal, and a second sensing signal according to the reference signal and the second signal. The output buffer is configured to provide the first sensing signal or the second sensing signal as an output according to a control signal.
Public/Granted literature
- US20210343333A1 MEMORY WITH SYMMETRIC READ CURRENT PROFILE Public/Granted day:2021-11-04
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