Invention Grant
- Patent Title: MRAM architecture with multiplexed sense amplifiers and direct write through buffers
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Application No.: US17145083Application Date: 2021-01-08
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Publication No.: US11621027B2Publication Date: 2023-04-04
- Inventor: Adrian E. Ong
- Applicant: Integrated Silicon Solution, (Cayman) Inc.
- Applicant Address: KY Grand Cayman
- Assignee: Integrated Silicon Solution, (Cayman) Inc.
- Current Assignee: Integrated Silicon Solution, (Cayman) Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
A magnetic memory device for storing and quickly retrieving data from an array of magnetic memory elements. The array includes a plurality of magnetic memory element such as magnetic tunnel junction elements arranged in rows and columns. A plurality of multiplexed bit lines is connected with a first end of each of the magnetic memory elements and plurality of multiplexed source lines are connected with a second end of each of the magnetic memory elements. The multiplexing allows source line current and/or bit line current to be applied to an individual column of memory elements in the array for quick retrieval of data in a Magnetic Random Access Memory (MRAM) system.
Public/Granted literature
- US20210217453A1 MRAM ARCHITECTURE WITH MULTIPLEXED SENSE AMPLIFIERS AND DIRECT WRITE THROUGH BUFFERS Public/Granted day:2021-07-15
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