Invention Grant
- Patent Title: Power amplifier circuit and semiconductor device
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Application No.: US17168618Application Date: 2021-02-05
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Publication No.: US11601102B2Publication Date: 2023-03-07
- Inventor: Hiroaki Tokuya , Hideyuki Sato , Fumio Harima , Kenichi Shimamoto , Satoshi Tanaka , Takayuki Kawano , Ryoki Shikishima , Atsushi Kurokawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2020-018150 20200205,JPJP2020-132359 20200804
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/24 ; H01L23/00 ; H03F3/195

Abstract:
A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.
Public/Granted literature
- US20210242842A1 POWER AMPLIFIER CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2021-08-05
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