Invention Grant
- Patent Title: Asymmetrical PN junction thermoelectric couple structure and its parameter determination method
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Application No.: US16959035Application Date: 2019-03-19
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Publication No.: US11600758B2Publication Date: 2023-03-07
- Inventor: Ruochen Wang , Ding Luo , Wei Yu , Weiqi Zhou , Long Chen
- Applicant: JIANGSU UNIVERSITY
- Applicant Address: CN Zhenjiang
- Assignee: JIANGSU UNIVERSITY
- Current Assignee: JIANGSU UNIVERSITY
- Current Assignee Address: CN Zhenjiang
- Agency: Heslin Rothenberg Farley & Mesiti, P.C.
- Priority: CN201910179839.9 20190311
- International Application: PCT/CN2019/078587 WO 20190319
- International Announcement: WO2020/181568 WO 20200917
- Main IPC: H01L35/32
- IPC: H01L35/32 ; G01R21/06 ; H01L35/10 ; G01R31/26

Abstract:
The present invention discloses an asymmetrical PN junction thermoelectric couple structure and its parameter determination method. By changing the structural parameters of p-type semiconductor or n-type semiconductor, the current generated by p-type semiconductor is equal to the current generated by the n-type semiconductor, so that the high-efficiency output of PN junction thermoelectric couple can be realized. Meanwhile, the present invention provides a method for determining the parameters of PN junction based on the numerical solution method. Finally, the optimal size parameters of PN junction are obtained.
Public/Granted literature
- US20210217944A1 AN ASYMMETRICAL PN JUNCTION THERMOELECTRIC COUPLE STRUCTURE AND ITS PARAMETER DETERMINATION METHOD Public/Granted day:2021-07-15
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