Invention Grant
- Patent Title: Absorption enhancement structure to increase quantum efficiency of image sensor
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Application No.: US16848903Application Date: 2020-04-15
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Publication No.: US11600647B2Publication Date: 2023-03-07
- Inventor: Tsun-Kai Tsao , Cheng-Hsien Chou , Jiech-Fun Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a substrate. The substrate has a front-side surface and a back-side surface. An absorption enhancement structure is disposed along the back-side surface of the substrate and overlies the photodetector. The absorption enhancement structure includes a plurality of protrusions that extend outwardly from the back-side surface of the substrate. Each protrusion comprises opposing curved sidewalls.
Public/Granted literature
- US20210272996A1 ABSORPTION ENHANCEMENT STRUCTURE TO INCREASE QUANTUM EFFICIENCY OF IMAGE SENSOR Public/Granted day:2021-09-02
Information query
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