Apparatuses and methods for manufacturing chips are described. An example method includes: removing a first portion of a cover layer and at least one dielectric layer under the first portion of the cover layer in a cut region between chips to form a groove, and forming a support structure including a second portion of the cover layer and the at least one dielectric layer under the second portion of the cover layer in the cut region; removing a third portion of the cover layer in one of the chips and a portion of the at least one dielectric layer under the third portion of the cover layer to form an hole on the first chip; depositing a conductive layer to cover the cover layer and the hole; forming a conductive pillar on the conductive layer in the hole; and removing the conductive layer on the cover layer and an edge surface of the hole.