Invention Grant
- Patent Title: Method of forming RDLS and structure formed thereof
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Application No.: US17121020Application Date: 2020-12-14
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Publication No.: US11600574B2Publication Date: 2023-03-07
- Inventor: Hung-Jui Kuo , Yun Chen Hsieh , Hui-Jung Tsai , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L23/00 ; H01L25/10 ; H01L25/00

Abstract:
A method includes encapsulating a device die in an encapsulating material, planarizing the device die and the encapsulating material, and forming a first plurality of conductive features electrically coupling to the device die. The step of forming the first plurality of conductive features includes a deposition-and-etching process, which includes depositing a blanket copper-containing layer, forming a patterned photo resist over the blanket copper-containing layer, and etching the blanket copper-containing layer to transfer patterns of the patterned photo resist into the blanket copper-containing layer.
Public/Granted literature
- US20210098383A1 Method of Forming RDLS and Structure Formed Thereof Public/Granted day:2021-04-01
Information query
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