- Patent Title: Spin element and reservoir element including high resistance layer
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Application No.: US16959690Application Date: 2020-01-24
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Publication No.: US11545618B2Publication Date: 2023-01-03
- Inventor: Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2020/002500 WO 20200124
- International Announcement: WO2021/149241 WO 20210729
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L27/22 ; H01L43/06 ; G06N3/063

Abstract:
A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.
Public/Granted literature
- US20210399210A1 SPIN ELEMENT AND RESERVOIR ELEMENT Public/Granted day:2021-12-23
Information query
IPC分类: