Invention Grant
- Patent Title: Semiconductor component having through-silicon vias
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Application No.: US17021600Application Date: 2020-09-15
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Publication No.: US11545392B2Publication Date: 2023-01-03
- Inventor: Chen-Hua Yu , Cheng-Hung Chang , Ebin Liao , Chia-Lin Yu , Hsiang-Yi Wang , Chun Hua Chang , Li-Hsien Huang , Darryl Kuo , Tsang-Jiuh Wu , Wen-Chih Chiou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L23/498 ; H01L21/02 ; H01L21/306 ; H01L21/3105 ; H01L21/321 ; H01L25/065 ; H01L25/11 ; H01L23/538 ; H01L25/04 ; H01L25/07 ; H01L25/075

Abstract:
A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T1 at a first end of the opening, and a thickness T2 at a second end of the opening, and R1 is a ratio of T1 to T2. The semiconductor component further includes a second dielectric liner over the first dielectric liner, wherein the second dielectric liner having a thickness T3 at the first end of the opening, a thickness T4 at the second end of the opening, R2 is a ratio of T3 to T4, and R1 is greater than R2.
Public/Granted literature
- US20210005515A1 SEMICONDUCTOR COMPONENT HAVING THROUGH-SILICON VIAS Public/Granted day:2021-01-07
Information query
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