Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US17097141Application Date: 2020-11-13
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Publication No.: US11545355B2Publication Date: 2023-01-03
- Inventor: Kae Kumagai , Toru Hisamatsu , Masanobu Honda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2019-205415 20191113,JPJP2020-152825 20200911
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/52 ; H01L21/3065 ; H01L21/308 ; H01L21/66 ; H01J37/32

Abstract:
A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).
Public/Granted literature
- US20210143004A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-05-13
Information query
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