Invention Grant
- Patent Title: Memory device with unipolar selector
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Application No.: US16908914Application Date: 2020-06-23
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Publication No.: US11545201B2Publication Date: 2023-01-03
- Inventor: Sheng-Chih Lai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C5/06

Abstract:
Various embodiments of the present application are directed towards a memory cell, an integrated chip comprising a memory cell, and a method of operating a memory device. In some embodiments, the memory cell comprises a data-storage element having a variable resistance and a unipolar selector electrically coupled in series with the data-storage element. The memory cell is configured to be written by a writing voltage with a single polarity applying across the data-storage element and the unipolar selector.
Public/Granted literature
- US20210398577A1 MEMORY DEVICE WITH UNIPOLAR SELECTOR Public/Granted day:2021-12-23
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